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For example, a diamond-based chemical gas sensor using Pd/i-diamond/p+-diamond metalinsulator-semiconductor diode structure has been made and the behavior of a new diamond-based chemical gas sensor has been studied. Also, the creation and properties of diamond microtips as field emitters are discussed. 1 Introduction Following is an introductory overview of the diamond examples that are the subject of this paper. *Author to whom correspondence should be addressed. Page 10 Microelectromechanical Piezoresistance (PZR) Based Effects and Microdevices.

Percentage of sp3-carbon>80%60%25%20%4. 365. Young's modulus, Y, GPa450300160806. Resistivity, rd, Ohm cm2 ´ 1077 ´ 1088006007. Surface potential (photo-emf), meV-160-100-60-308. Lowest emission field, Eoff, V/mm>18>20>30>609. Threshold emission field, Eth, V/mm>60>100>80>13010. Spatial dispersion of Eoff, %+140+100+40+2011. 29 Table 2. H1H2H3H41. Film thickness, h, nm9001050100010002. Bias voltage, U, eV15006003001503. 54. 75. 66. 37. 38. Hydrogen contents, atomic %1091289. Resistivity, rd, Ohm cm1081095 ´ 1011101310.

Page xv KEYNOTE SPEAKERS N. Bulienkov (Institute of Physical Chemistry, Russia) ''Atomic Construction of DLC" V. Chelnokov (Ioffe Institute, Russia) "Electronics of Wide Band-Gap Semiconductors" J. Davidson (Vanderbilt University, USA) "Diamond as an Active Sensor Material" A. Gicquel (Paris Nord University, France) "Temperature and Hydrogen Atom Concentrations in Microwave Plasmas Used for Diamond Depositions" P. Gielisse (Florida State University, USA) "Mechanical Properties of Diamond, Diamond-Like Films and Related Materials" T.

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Diamond and Diamond-Like Film Applications by Peter Gielisse

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